SK Hynix has introduced iHBM, or Integrated High Bandwidth Memory, a cooling solution that places Integrated Cooling Elements directly inside the HBM package. This reduces thermal resistance by more than 30% compared to traditional indirect cooling, addressing critical heat challenges in stacked DRAM layers for AI chips.

The die-to-die physical interface, a key thermal hotspot in high-stacked memory, benefits from shorter heat pathways. The company says this approach is vital for next-generation products like HBM5, where layer counts and data rates will push thermal limits.

Following the announcement, SK Hynix shares surged over 6%, crossing the 2 million won mark. The company continues to collaborate with TSMC on HBM4 and CoWoS packaging, positioning itself as an integrated thermal and packaging solutions provider for the AI era.

Lower operating temperatures enable sustained higher clock speeds, improved reliability, and potential for denser memory stacking. Production timelines and customer commitments remain undisclosed.